هفته نامه اطلاع رسانی اختراعات منتشر شده در سازمان جهانی مالکیت فکری
invbazaar.com

سالهفتهIDTitleApplNoIPCApplicantSubgroupزیر گروهرشته شرحDescription
202605WO/2025/152452CIRCUIT BOARD ASSEMBLY, MANUFACTURING METHOD FOR CIRCUIT BOARD ASSEMBLY, AND ELECTRONIC DEVICECN2024/116123H01L 23/31HUAWEI TECHNOLOGIES CO., LTD.ELECTRICITYالکتریسیتهدانش هسته ای
202605WO/2026/020608SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREFOR, AND ELECTRONIC DEVICECN2024/126204H01L 27/02BEIJING SUPERSTRING ACADEMY OF MEMORY TECHNOLOGYELECTRICITYالکتریسیتهدانش هسته ای
202605WO/2026/020668SMALL-SIZED OXIDE SEMICONDUCTOR ETCHING METHODCN2024/135579H01L 21/467BEIJING SUPERSTRING ACADEMY OF MEMORY TECHNOLOGYELECTRICITYالکتریسیتهدانش هسته ای
202605WO/2026/020797INTERFACE LEAD-OUT METHOD FOR FLIP-CHIP STACKED TRANSISTOR, TRANSISTOR, COMPONENT, AND DEVICECN2025/077596H01L 21/768PEKING UNIVERSITYELECTRICITYالکتریسیتهدانش هسته ای
202605WO/2026/020831ESD PROTECTION DEVICE AND CHIPCN2025/080979H01L 23/60CSMC TECHNOLOGIES FAB2 CO., LTD.ELECTRICITYالکتریسیتهدانش هسته ای
202605WO/2026/020851SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREFORCN2025/083328H01L 21/48SHANGHAI WANSHENG ALLOY MATERIALS CO., LTD.ELECTRICITYالکتریسیتهدانش هسته ای
202605WO/2026/021004CHIP HEAT DISSIPATION STRUCTURE AND PACKAGING METHODCN2025/099193H01L 21/56NATIONAL CENTER FOR ADVANCED PACKAGING CO., LTDELECTRICITYالکتریسیتهدانش هسته ای
202605WO/2026/021027SUBSTRATE HEAT TREATMENT APPARATUS, HEAT TREATMENT METHOD AND COATING AND DEVELOPING DEVICECN2025/100146H01L 21/67ACM RESEARCH (SHANGHAI) , INC.ELECTRICITYالکتریسیتهدانش هسته ای
202605WO/2026/021031PROCESS TUBE AND FURNACE TUBE APPARATUSCN2025/100208H01L 21/67ACM RESEARCH (SHANGHAI) , INC.ELECTRICITYالکتریسیتهدانش هسته ای
202605WO/2026/021171PACKAGING STRUCTURE AND ELECTRONIC DEVICECN2025/105132H01L 23/552HUAWEI TECHNOLOGIES CO., LTD.ELECTRICITYالکتریسیتهدانش هسته ای
202605WO/2026/021266METHOD FOR MEASURING TEMPERATURE OF WAFER IN REACTION CHAMBER, AND REACTION CHAMBERCN2025/107621H01L 21/67BEIJING NAURA MICROELECTRONICS EQUIPMENT CO., LTD.ELECTRICITYالکتریسیتهدانش هسته ای
202605WO/2026/021982SEMICONDUCTOR STRUCTUREEP2025/070428H01L 23/48AMS-OSRAM AGELECTRICITYالکتریسیتهدانش هسته ای
202605WO/2026/022021COMPOSITION, ITS USE AND A PROCESS FOR SELECTIVELY ETCHING SILICON-GERMANIUM LAYERSEP2025/070634H01L 21/306BASF SEELECTRICITYالکتریسیتهدانش هسته ای
202605WO/2026/022293LIGHT-EMITTING MODULE AND MOTOR VEHICLEEP2025/071330H01L 25/075VALEO VISIONELECTRICITYالکتریسیتهدانش هسته ای
202605WO/2026/022895DISPLAY DEVICEJP2024/026154H01L 29/786SHARP DISPLAY TECHNOLOGY CORPORATIONELECTRICITYالکتریسیتهدانش هسته ای
202605WO/2026/022899SEMICONDUCTOR DEVICE MANUFACTURING METHOD, HEAT-RESISTANT MEMBER, AND SEALING MATERIALJP2024/026170H01L 21/683RESONAC CORPORATIONELECTRICITYالکتریسیتهدانش هسته ای
202605WO/2026/022919COOLING DEVICEJP2024/026228H01L 23/36NISSAN MOTOR CO., LTD.ELECTRICITYالکتریسیتهدانش هسته ای
202605WO/2026/022936SEMICONDUCTOR MODULEJP2024/026329H01L 23/12NISSAN MOTOR CO., LTD.ELECTRICITYالکتریسیتهدانش هسته ای
202605WO/2026/022963METHOD FOR MANUFACTURING SILICON CARBIDE SUBSTRATE, AND APPARATUS FOR MANUFACTURING SILICON CARBIDE SUBSTRATEJP2024/026416H01L 21/268ITES CO., LTD.ELECTRICITYالکتریسیتهدانش هسته ای
202605WO/2026/022990ELECTRIC POWER CONVERSION APPARATUSJP2024/026535H01L 23/40ASTEMO, LTD.ELECTRICITYالکتریسیتهدانش هسته ای
202605WO/2026/022991DIAGNOSTIC DEVICE, DIAGNOSTIC METHOD, AND SEMICONDUCTOR DEVICE MANUFACTURING SYSTEMJP2024/026538H01L 21/683HITACHI HIGH-TECH CORPORATIONELECTRICITYالکتریسیتهدانش هسته ای
202605WO/2026/023006SUBSTRATE PROCESSING DEVICE, SUBSTRATE PROCESSING METHOD, METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE, AND PROGRAMJP2024/026576H01L 21/205KOKUSAI ELECTRIC CORPORATIONELECTRICITYالکتریسیتهدانش هسته ای
202605WO/2026/023028DIAGNOSTIC APPARATUS, DIAGNOSTIC SYSTEM, AND DIAGNOSTIC METHOD FOR SEMICONDUCTOR MANUFACTURING APPARATUSJP2024/026661H01L 21/02HITACHI HIGH-TECH CORPORATIONELECTRICITYالکتریسیتهدانش هسته ای
202605WO/2026/023056SEMICONDUCTOR THIN FILM STRUCTUREJP2024/026808H01L 21/20NTT, INC.ELECTRICITYالکتریسیتهدانش هسته ای
202605WO/2026/023075METHOD FOR ACQUIRING CORRECTION VALUE, METHOD FOR CONTROLLING TEMPERATURE, METHOD FOR PRODUCING SEMICONDUCTOR DEVICE, SUBSTRATE PROCESSING DEVICE, AND PROGRAMJP2024/026870H01L 21/324KOKUSAI ELECTRIC CORPORATIONELECTRICITYالکتریسیتهدانش هسته ای
202605WO/2026/023121SEMICONDUCTOR DEVICEJP2025/002815H01L 25/07KABUSHIKI KAISHA TOSHIBAELECTRICITYالکتریسیتهدانش هسته ای
202605WO/2026/023135SEMICONDUCTOR DEVICEJP2025/007115H01L 23/473ASTEMO, LTD.ELECTRICITYالکتریسیتهدانش هسته ای
202605WO/2026/023159SUBSTRATE PROCESSING DEVICE, SUBSTRATE PROCESSING METHOD, PRODUCTION METHOD FOR SEMICONDUCTOR DEVICE, AND PROGRAMJP2025/012863H01L 21/31KOKUSAI ELECTRIC CORPORATIONELECTRICITYالکتریسیتهدانش هسته ای
202605WO/2026/023163SUBSTRATE PROCESSING DEVICE, SUBSTRATE PROCESSING METHOD, METHOD FOR PRODUCING SEMICONDUCTOR DEVICE, AND PROGRAMJP2025/013204H01L 21/268KOKUSAI ELECTRIC CORPORATIONELECTRICITYالکتریسیتهدانش هسته ای
202605WO/2026/023169ROBOT SYSTEMJP2025/014456H01L 21/677KAWASAKI JUKOGYO KABUSHIKI KAISHAELECTRICITYالکتریسیتهدانش هسته ای
202605WO/2026/023172LIGHTING DEVICE, SEMICONDUCTOR MANUFACTURING DEVICE, SEMICONDUCTOR DEVICE INSPECTION DEVICE, SEMICONDUCTOR DEVICE MANUFACTURING METHOD, AND SEMICONDUCTOR DEVICE INSPECTION METHODJP2025/014865H01L 21/52FASFORD TECHNOLOGY CO., LTD.ELECTRICITYالکتریسیتهدانش هسته ای
202605WO/2026/023176SUBSTRATE PROCESSING METHOD AND SUBSTRATE PROCESSING DEVICEJP2025/015213H01L 21/306SCREEN HOLDINGS CO., LTD.ELECTRICITYالکتریسیتهدانش هسته ای
202605WO/2026/023227HEAT TREATMENT DEVICE AND HEAT TREATMENT METHODJP2025/018794H01L 21/324SCREEN HOLDINGS CO., LTD.ELECTRICITYالکتریسیتهدانش هسته ای
202605WO/2026/023247STACKED STRUCTURE AND SEMICONDUCTOR DEVICEJP2025/019857H01L 21/20JAPAN DISPLAY INC.ELECTRICITYالکتریسیتهدانش هسته ای
202605WO/2026/023257DIAGNOSTIC DEVICE, MOUNTING DEVICE, AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICEJP2025/020562H01L 21/52FASFORD TECHNOLOGY CO., LTD.ELECTRICITYالکتریسیتهدانش هسته ای
202605WO/2026/023361SEMICONDUCTOR MANUFACTURING DEVICEJP2025/023842H01L 21/683TEIKOKU TAPING SYSTEM CO., LTD.ELECTRICITYالکتریسیتهدانش هسته ای
202605WO/2026/023419STAGE AND SUBSTRATE PROCESSING DEVICEJP2025/024710H01L 21/683TOKYO ELECTRON LIMITEDELECTRICITYالکتریسیتهدانش هسته ای
202605WO/2026/023420STAGE, SUBSTRATE PROCESSING DEVICE, AND TEMPERATURE ADJUSTMENT METHODJP2025/024712H01L 21/683TOKYO ELECTRON LIMITEDELECTRICITYالکتریسیتهدانش هسته ای
202605WO/2026/023428PRODUCTION METHOD FOR DEVICE CONNECTED BODY, AND DEVICE CONNECTED BODYJP2025/024766H01L 23/14TOYOBO CO., LTD.ELECTRICITYالکتریسیتهدانش هسته ای
202605WO/2026/023458SEMICONDUCTOR DEVICE MANUFACTURING METHOD AND SEMICONDUCTOR DEVICEJP2025/025085H01L 23/40ROHM CO., LTD.ELECTRICITYالکتریسیتهدانش هسته ای
202605WO/2026/023470ROBOT SYSTEM AND CONTROL METHOD FOR ROBOT SYSTEMJP2025/025187H01L 21/677KAWASAKI JUKOGYO KABUSHIKI KAISHAELECTRICITYالکتریسیتهدانش هسته ای
202605WO/2026/023472PROCESSING SYSTEM, REMOVAL JIG, AND REMOVAL METHODJP2025/025201H01L 21/677TOKYO ELECTRON LIMITEDELECTRICITYالکتریسیتهدانش هسته ای
202605WO/2026/023473BONDING DEVICE AND BONDING METHODJP2025/025206H01L 21/02TOKYO ELECTRON LIMITEDELECTRICITYالکتریسیتهدانش هسته ای
202605WO/2026/023476INFORMATION PROCESSING METHOD, COMPUTER PROGRAM, AND INFORMATION PROCESSING DEVICEJP2025/025234H01L 21/02TOKYO ELECTRON LIMITEDELECTRICITYالکتریسیتهدانش هسته ای
202605WO/2026/023488ALIGNER, ROBOT SYSTEM, AND SUBSTRATE ALIGNMENT METHODJP2025/025270H01L 21/68KAWASAKI JUKOGYO KABUSHIKI KAISHAELECTRICITYالکتریسیتهدانش هسته ای
202605WO/2026/023489SEMICONDUCTOR COMPOSITE SUBSTRATE, SEMICONDUCTOR DEVICE, AND METHOD FOR MANUFACTURING SEMICONDUCTOR COMPOSITE SUBSTRATEJP2025/025275H01L 21/20ROHM CO., LTD.ELECTRICITYالکتریسیتهدانش هسته ای
202605WO/2026/023498SYSTEM FOR TEACHING SUBSTRATE TRANSFER ROBOT AND METHOD FOR TEACHING SUBSTRATE TRANSFER ROBOTJP2025/025330H01L 21/677KAWASAKI JUKOGYO KABUSHIKI KAISHAELECTRICITYالکتریسیتهدانش هسته ای
202605WO/2026/023521IMPRINT MOLD SUBSTRATE AND METHOD FOR MANUFACTURING SAME, AND IMPRINT MOLD AND METHOD FOR MANUFACTURING SAMEJP2025/025464H01L 21/027DAI NIPPON PRINTING CO., LTD.ELECTRICITYالکتریسیتهدانش هسته ای
202605WO/2026/023536SEMICONDUCTOR DEVICE AND SEMICONDUCTOR DEVICE ASSEMBLYJP2025/025577H01L 23/29ROHM CO., LTD.ELECTRICITYالکتریسیتهدانش هسته ای
202605WO/2026/023540MAPPING DEVICE AND MAPPING METHODJP2025/025592H01L 21/67SINFONIA TECHNOLOGY CO., LTD.ELECTRICITYالکتریسیتهدانش هسته ای
202605WO/2026/023566METHOD FOR MANUFACTURING CIRCUIT BOARD FOR SEMICONDUCTOR PACKAGEJP2025/025727H01L 23/12AJINOMOTO CO., INC.ELECTRICITYالکتریسیتهدانش هسته ای
202605WO/2026/023666CERAMIC COPPER CIRCUIT BOARD, SEMICONDUCTOR DEVICE, AND METHOD FOR MANUFACTURING CERAMIC COPPER CIRCUIT BOARDJP2025/026263H01L 23/13NITERRA MATERIALS CO., LTD.ELECTRICITYالکتریسیتهدانش هسته ای
202605WO/2026/023830TRANSIENT LIQUID PHASE DIFFUSION BONDING PREFORM INCLUDING UNIDIRECTIONAL POROUS METAL BODY, AND TRANSIENT LIQUID PHASE DIFFUSION BONDING METHOD AND POWER MODULE USING SAMEKR2025/007270H01L 23/373INHA UNIVERSITY RESEARCH AND BUSINESS FOUNDATIONELECTRICITYالکتریسیتهدانش هسته ای
202605WO/2026/023840SUBSTRATE PROCESSING DEVICE AND OPERATION METHOD THEREOFKR2025/007410H01L 21/67PSK HOLDINGS INC.ELECTRICITYالکتریسیتهدانش هسته ای
202605WO/2026/023911METHOD FOR DIVIDING PROCESSING TARGETKR2025/009358H01L 21/78EO TECHNICS CO.,LTD.ELECTRICITYالکتریسیتهدانش هسته ای
202605WO/2026/023992ACTIVE HEAT DISSIPATION MODULEKR2025/010521H01L 23/38NAINTECH CO., LTD.ELECTRICITYالکتریسیتهدانش هسته ای
202605WO/2026/024093METHOD FOR DESIGNING ATOMIC LAYER DEPOSITION PROCESS FOR MANUFACTURING AMORPHOUS OXIDE SEMICONDUCTOR MATERIAL FILM AND AMORPHOUS IGZO MATERIAL FILM MANUFACTURED USING SAMEKR2025/010926H01L 21/02IUCF-HYU(INDUSTRY-UNIVERSITY COOPERATION FOUNDATION HANYANG UNIVERSITY)ELECTRICITYالکتریسیتهدانش هسته ای
202605WO/2026/024107METHOD FOR BONDING ELECTRONIC COMPONENTS USING PNEUMATIC PRESSUREKR2025/010965H01L 21/48AMOGREENTECH CO., LTD.ELECTRICITYالکتریسیتهدانش هسته ای
202605WO/2026/024221SYSTEM AND METHOD FOR IC UNIT SINGULATION AND SORTINGSG2025/050453H01L 21/67ROKKO SYSTEMS PTE LTDELECTRICITYالکتریسیتهدانش هسته ای
202605WO/2026/024322ETCHING SYSTEM FOR FORMING RECESSED FEATURES WITH HIGH ASPECT RATIOUS2025/019496H01L 21/768TOKYO ELECTRON LIMITEDELECTRICITYالکتریسیتهدانش هسته ای
202605WO/2026/024324THERMALLY CONDUCTIVE SUBSTRATE BONDING INTERFACEUS2025/021069H01L 21/18TOKYO ELECTRON LIMITEDELECTRICITYالکتریسیتهدانش هسته ای
202605WO/2026/024325METAL RECESS DEPTH MEASUREMENTS BY CAPACITOR TEST STRUCTUREUS2025/021435H01L 21/66TOKYO ELECTRON LIMITEDELECTRICITYالکتریسیتهدانش هسته ای
202605WO/2026/024336ASSEMBLIES AND METHODS ASSOCIATED WITH AN ELASTICALLY REINFORCED DISPENSABLE GELUS2025/025716H01L 23/373PARKER-HANNIFIN CORPORATIONELECTRICITYالکتریسیتهدانش هسته ای
202605WO/2026/024355IMAGING MASK STACKS AND METHODS FOR LITHOGRAPHICALLY PATTERNING A SUBSTRATEUS2025/030659H01L 21/033TOKYO ELECTRON LIMITEDELECTRICITYالکتریسیتهدانش هسته ای
202605WO/2026/024452CONFORMAL SELECTIVE ETCHING OF SILICON OXIDEUS2025/036437H01L 21/311APPLIED MATERIALS, INC.ELECTRICITYالکتریسیتهدانش هسته ای
202605WO/2026/024463PACKAGE COMPRISING AN INTEGRATED DEVICE WITH BACK SIDE METALLIZATION INTERCONNECTSUS2025/037002H01L 23/498QUALCOMM INCORPORATEDELECTRICITYالکتریسیتهدانش هسته ای
202605WO/2026/024467WAFER TRANSFER ROBOTS INCLUDING END EFFECTORS HAVING INTEGRATED ANTENNAS FOR COMMUNICATION WITH SENSORSUS2025/037075H01L 21/677LAM RESEARCH CORPORATIONELECTRICITYالکتریسیتهدانش هسته ای
202605WO/2026/024480STACKED DIE SEMICONDUCTOR PACKAGE INCLUDING AN ARRAY OF PILLAR STRUCTURESUS2025/037346H01L 23/538MICRON TECHNOLOGY, INC.ELECTRICITYالکتریسیتهدانش هسته ای
202605WO/2026/024483INTEGRATED DEVICE COMPRISING NON-CIRCULAR PILLAR INTERCONNECTSUS2025/037370H01L 23/00QUALCOMM INCORPORATEDELECTRICITYالکتریسیتهدانش هسته ای
202605WO/2026/024485PACKAGE COMPRISING SUBSTRATE WITH VIA INTERCONNECTS COMPRISING NON-CIRCULAR PLANAR CROSS SECTIONUS2025/037386H01L 23/498QUALCOMM INCORPORATEDELECTRICITYالکتریسیتهدانش هسته ای
202605WO/2026/024486STACKED DIE SUBSTRATE-LESS SEMICONDUCTOR PACKAGEUS2025/037387H01L 25/065MICRON TECHNOLOGY, INC.ELECTRICITYالکتریسیتهدانش هسته ای
202605WO/2026/024523SYSTEM AND METHOD FOR PROCESS CHEMISTRY ABATEMENT AND RECYCLINGUS2025/037968H01L 21/67TOKYO ELECTRON LIMITEDELECTRICITYالکتریسیتهدانش هسته ای
202605WO/2026/024579POLYMER MATERIAL GAP-FILL FOR HYBRID BONDING IN A STACKED SEMICONDUCTOR SYSTEMUS2025/038339H01L 23/00MICRON TECHNOLOGY, INC.ELECTRICITYالکتریسیتهدانش هسته ای
202605WO/2026/024658SYSTEMS AND METHODS FOR REDUCING TRACE EXPOSURE IN STACKED SEMICONDUCTOR DEVICESUS2025/038548H01L 25/065MICRON TECHNOLOGY, INC.ELECTRICITYالکتریسیتهدانش هسته ای
202605WO/2026/024695WIRE BONDING SYSTEMS AND RELATED METHODS OF FORMING A VERTICAL WIRE STRUCTUREUS2025/038615H01L 23/00KULICKE AND SOFFA INDUSTRIES, INC.ELECTRICITYالکتریسیتهدانش هسته ای
202605WO/2026/024724SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE THAT FACILITATES TSV TESTINGUS2025/038666H01L 25/065MICRON TECHNOLOGY, INC.ELECTRICITYالکتریسیتهدانش هسته ای
202605WO/2026/024730COOLING SYSTEM USING A GASEOUS HEAT TRANSFER MEDIUMUS2025/038682H01L 23/467DELTA DESIGN, INC.ELECTRICITYالکتریسیتهدانش هسته ای
202605WO/2026/024742DIAMOND COATING FOR SEMICONDUCTORUS2025/038697H01L 23/373ADVANCED DIAMOND HOLDINGS, LLCELECTRICITYالکتریسیتهدانش هسته ای
202605WO/2026/024745METHODS AND SYSTEMS FOR CONTROLLING HEIGHTS OF DEVICE PACKAGESUS2025/038700H01L 25/065SK HYNIX NAND PRODUCT SOLUTIONS CORP. (DBA SOLIDIGM)ELECTRICITYالکتریسیتهدانش هسته ای
202605WO/2026/024831MICROFABRICATION OF LOW-RESISTANCE MOLYBDENUM INTERCONNECTSUS2025/038842H01L 21/768LAM RESEARCH CORPORATIONELECTRICITYالکتریسیتهدانش هسته ای
202605WO/2026/024984CONNECTING ELEMENT FOR SEMICONDUCTOR DEVICESUS2025/039141H01L 25/065ADEIA SEMICONDUCTOR BONDING TECHNOLOGIES INC.ELECTRICITYالکتریسیتهدانش هسته ای
202605WO/2026/025049PACKAGE INTERCONNECT STRUCTUREUS2025/039295H01L 23/498QUALCOMM INCORPORATEDELECTRICITYالکتریسیتهدانش هسته ای
202605WO/2026/025074SYSTEMS AND METHODS FOR COOLING ELEMENTS FOR SEMICONDUCTOR AND MULTI-TERMINAL DEVICESUS2025/039333H01L 23/373AKASH SYSTEMS, INC.ELECTRICITYالکتریسیتهدانش هسته ای